Scholarlink

<p>This study investigates the growth of nitrogen-doped zinc oxide (N: ZnO) thin films on silicon (Si) substrates using RF magnetron sputtering. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), were used to analyze the films. Atomic force microscopy (AFM) was employed to examine the grain size, distribution, and surface morphology. Results indicated that the annealing temperature significantly influenced surface texture, with a peak in roughness observed at 500&#xa0;°C. They also contribute to the understanding of (N: ZnO) thin films’ stability and potential applications in optoelectronic devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Advanced morphological characterization of N:ZnO thin films by RF magnetron sputtering and thermal annealing

  • 期刊论文

  • 发表日期：

    2025年3月13日

查看全文
  • Ştefan Ţălu,
  • Shahram Solaymani,
  • Niloofar Tajbakhsh,
  • Laya Dejam,
  • Jamshid Sabbaghzadeh,
  • Mojtaba Mohammadpour

摘要

This study investigates the growth of nitrogen-doped zinc oxide (N: ZnO) thin films on silicon (Si) substrates using RF magnetron sputtering. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), were used to analyze the films. Atomic force microscopy (AFM) was employed to examine the grain size, distribution, and surface morphology. Results indicated that the annealing temperature significantly influenced surface texture, with a peak in roughness observed at 500 °C. They also contribute to the understanding of (N: ZnO) thin films’ stability and potential applications in optoelectronic devices.