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<p>The study on the uniform deposition of metal seed layers on the inner wall of TGV using magnetron sputtering has attracted significant attention. We primarily studied the film growth mechanism through the model, focusing on particle incidence, surface diffusion, particle scattering, and particle cluster nucleation. The effects of each mechanism on the final outcome of non-planar film growth and the non-planar conformal coverage rate are described in the form of probability functions. When the RF sputtering power was increased from 100 to 200W, the simulation results showed that the central CCR of the TGV increased from 8.03 to 10.76%. Experimental results indicated that the average central CCR of the TGV increased from 7.03 to 9.38%. When the sputtering gas was switched from 40 sccm Ar to 40 sccm Ar-2 sccm N<sub>2</sub>, the simulation results revealed that the central CCR of the TGV increased from 8.03 to 15.76%, while experimental results showed that the average central CCR increased from 7.03 to 13.46%. Additionally, we calculated the percentage errors of the CCR between the theoretical simulations and experimental tests under three different processes. The errors were 12.3%, 8.12%, and 6.75%, respectively.</p>

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Non-plane film and its growth mechanism by magnetron sputtering deposition on glass through via substrate

  • 期刊论文

  • 发表日期：

    2025年3月14日

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  • Xinyu Zhou,
  • Xun Zhang,
  • Songlin Liu,
  • Jingyang Zhang,
  • Zhilin Cao,
  • Zhipeng Chang,
  • Yingliang Tian,
  • Ruzhi Wang

摘要

The study on the uniform deposition of metal seed layers on the inner wall of TGV using magnetron sputtering has attracted significant attention. We primarily studied the film growth mechanism through the model, focusing on particle incidence, surface diffusion, particle scattering, and particle cluster nucleation. The effects of each mechanism on the final outcome of non-planar film growth and the non-planar conformal coverage rate are described in the form of probability functions. When the RF sputtering power was increased from 100 to 200W, the simulation results showed that the central CCR of the TGV increased from 8.03 to 10.76%. Experimental results indicated that the average central CCR of the TGV increased from 7.03 to 9.38%. When the sputtering gas was switched from 40 sccm Ar to 40 sccm Ar-2 sccm N2, the simulation results revealed that the central CCR of the TGV increased from 8.03 to 15.76%, while experimental results showed that the average central CCR increased from 7.03 to 13.46%. Additionally, we calculated the percentage errors of the CCR between the theoretical simulations and experimental tests under three different processes. The errors were 12.3%, 8.12%, and 6.75%, respectively.