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<p>This paper is devoted to studying the internal quantum efficiency (IQE) of blue and green LEDs based on InGaN/GaN heterostructures in dependence on the following parameters: quantum well width, built-in piezoelectric field, and indium mole fraction in the active region. The paper demonstrates that the decrease in internal quantum efficiency is governed simultaneously by three non-radiative Auger processes: interband Auger recombination (AR), Auger recombination via deep energy levels involving localized carriers, and Auger recombination via deep energy levels involving barrier carriers. This study has shown for the first time that the maximum internal quantum efficiency of InGaN/GaN LEDs is determined by the deep-level Auger recombination. The in IQE decrease after passing the maximum is governed by the rate of interband and deep-center ARs. The paper presents a comprehensive calculation of the built-in electric field dependences of the rates of deep-center AR and interband AR. It is shown that the deep-center AR rate increases with increasing field, while that of the interband process decreases. In addition, there was performed a detailed analysis of the quantum efficiency dependence on the nonequilibrium carrier concentration, electric field, and LED parameters.</p>

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Internal piezoelectric field and Auger recombination in InGaN/GaN quantum wells: impact on device performance

  • 期刊论文

  • 发表日期：

    2025年1月10日

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  • Dmitriy Samosvat,
  • Anastasia Karpova,
  • Georgy Zegrya

摘要

This paper is devoted to studying the internal quantum efficiency (IQE) of blue and green LEDs based on InGaN/GaN heterostructures in dependence on the following parameters: quantum well width, built-in piezoelectric field, and indium mole fraction in the active region. The paper demonstrates that the decrease in internal quantum efficiency is governed simultaneously by three non-radiative Auger processes: interband Auger recombination (AR), Auger recombination via deep energy levels involving localized carriers, and Auger recombination via deep energy levels involving barrier carriers. This study has shown for the first time that the maximum internal quantum efficiency of InGaN/GaN LEDs is determined by the deep-level Auger recombination. The in IQE decrease after passing the maximum is governed by the rate of interband and deep-center ARs. The paper presents a comprehensive calculation of the built-in electric field dependences of the rates of deep-center AR and interband AR. It is shown that the deep-center AR rate increases with increasing field, while that of the interband process decreases. In addition, there was performed a detailed analysis of the quantum efficiency dependence on the nonequilibrium carrier concentration, electric field, and LED parameters.