Self-powered wide bandgap UV detector based on CuO/α-Ga2O3 heterostructure
摘要
CuO nanoparticles were successfully attached to the α-Ga2O3 nanoarray/FTO structure using a simple dipping method and re-annealing process. This resulted in the creation of a self-powered photoelectrochemical photodetector based on FTO/α-Ga2O3/CuO heterojunction. The photodetector responds to a broader range of wavelengths, including 365 nm ultraviolet light, compared to the FTO/α-Ga2O3 structure. The photodetector exhibits an Iphoto/Idark ratio of 0.27 and a photoresponsivity of 0.4 mA·W−1 when exposed to 254 nm deep ultraviolet light. Similarly, when exposed to 365 nm ultraviolet light, the photodetector has an Iphoto/Idark ratio of 1.09 and a photoresponsivity of 0.05 mA·W−1. The photoresponse current I–t curves show clear differences, allowing for effective differentiation between ultraviolet light of different wavelengths (254 nm and 365 nm) in the CuO/α-Ga2O3 photodetector.