Ferromagnetic and photoluminescence properties of transparent conductive Cd1-xSnxO thin films for light emitting diode applications
摘要
Tin doped cadmium oxide (Cd1-xSnxO) thin films at different tin (Sn) concentrations (x = 0, 0.03, 0.05, 0.07) were prepared using electron beam evaporation technique and subjected to various characterisations. From XRD, prepared thin films shows polycrystalline nature with cubic structure. FE-SEM nano-graphs confirmed the elongated oval shape morphology with 1:3 aspect ratios. FT-IR analysis revealed the presence of functional groups and chemical interactions. Raman spectrum was recorded in the range of 200 cm−1 to 1000 cm−1. Using Tauc’s relation optical bandgap is calculated and it is found to be increased 2.00 eV – 2.40 eV. Photoluminescence spectra were recorded Cd1-xSnxO thin films and emission peaks were found in visible region. CIE diagrams confirm the thin films in blue- green portion. Using a source meter, the electrical properties were examined and it was observed that the electrical resistivity decreased. Magnetic properties reveals that the Sn-doped CdO thin films exhibit ferromagnetic nature.