Semiconducting BaS₃:La₂S₃:DyS_1.8 multinary metal chalcogenide hetero-system prepared via single source precursor route: expounding energy storage potential

The current study is concerned with understanding the synthesis and application of the diversified BaS₃:La₂S₃:Dy_1.8 dithiocarbamate sulphide by the single source precursor (SSP) approach. Analytical approaches were used to evaluate the optical, crystalline, vibrational crosslinking, morphological, and thermal properties of BaS₃:La₂S₃:Dy_1.8 chalcogenide. The synthesized chalcogenide has an average crystallite size of 16.35 nm and mixed phases, with a direct band gap energy of 3.9 eV. The study of functional groups revealed the presence of metal sulphide bonds. In terms of morphology, BaS₃:La₂S₃:Dy_1.8 chalcogenide has an uneven shape with a small amount of aggregation. The electrochemical charge storage behavior of BaS₃:La₂S₃:Dy_1.8 was studied using a nickel foam electrode. The trichalcogenide-decorated electrode exhibited charge-storing behavior, with a specific capacitance of 723 F g^− 1 determined by cyclic voltammetry. The electrode has a specific power density of 11,166 W kg^− 1 and a low series resistance of 0.9 Ω, as shown by impedance measurements.