Study of the structural and optoelectronic properties of ZnSn_1-xSb_xO₃ thin films

Thin films of zinc stannate, both pure and doped with antimony, were synthesized via the RF sputtering method. X-ray diffraction patterns showed \(\hbox {SnO}_2\) ${\text{SnO}}_2$ and \(\hbox {Zn}_2\hbox {SnO}_4\) ${\text{Zn}}_2{\text{SnO}}_4$ phases. Atomic force microscopy analysis demonstrated that doping resulted in a reduction of the films roughness from 2.48 to 1.07 nm, attributed to an increase in grain density. Photoluminescence spectra exhibited a broad visible emission band with a peak centered around 557 nm. Transparency in the visible region was high for the films, reaching 80%. The electrical studies revealed that the resistivity decreased with doping upto \(8.54 \times 10^{-2}\,\Omega \,\hbox {cm}\) $8.54\times {10}^{-2}\mathrm{\Omega }\text{cm}$ due to the increase in charge carriers concentration and mobility.