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Microwave magnetic and high dielectric properties of Ca2+-Sn4+ co-substituted BiIn-YIG ferrites for device application

  • Kai Sun,
  • Jie Li,
  • Yixin Chen,
  • Yang Xiao,
  • Yan Yang,
  • Lei Liu,
  • Yingli Liu

摘要

The yttrium iron garnet (YIG) microwave ferrite is one of the key basis materials for device application. In this study, Ca2+-Sn4+ ions was chose to co-substitute Y3+-Fe3+ ions in YIG ferrite. Bi0.4Y2.6−xCaxFe4.8−xIn0.2SnxO12 (x = 0.0-0.25 with a step of 0.05, BiIn-YIG) ferrite materials were synthesized via solid state reaction method. The phase formation, microstructure, magnetic and dielectric properties of all samples were carried out and discussed detailed. X-ray diffraction (XRD) patterns showed that Ca-Sn co-substitution did not change the phase structure of YIG garget ferrites, and scanning electron microscope (SEM) results showed Ca-Sn promoted even grains growth. With Ca2+-Sn4+ content increase, bulk density (ρ), specific saturation magnetization (σ) and saturation magnetization (4πMs) showed the same trend of first increase and then decrease. When x = 0.2, the maximum bulk density of sample was 5.332 g/cm3, specific saturation magnetization (σ) was 28.22 emu/g, and saturation magnetization (4πMs) was 1891.35 Gs. The real part of dielectric permittivity (ε’) and the real part of magnetic permeability (µ’) increased with Ca2+-Sn4+ co-substitution. When x = 0.25, the value of ε’ was 17.03 (@10 MHz), and the value of µ’ was 181.3 (@1 MHz). At 9.56 GHz, ferromagnetic resonance linewidth (ΔH) of samples decreased first from 149.09 Oe (x = 0.00) to 100.46 Oe (x = 0.20), and then increased to 116.04 Oe (x = 0.25). Based on the performances of x = 0.20 sample, a high frequency microwave circulator was designed and optimized. The isolation loss and insertion loss of were less than − 20 dB in the 8.7–11.75 GHz frequency range, with a VSWR of less than 1.22. meanwhile, the circulator had an insertion loss higher than − 0.5 dB and the relative bandwidth of 31%. The results proved the possible application of these materials in high frequency microwave devices.