Study on the effect of diamond wire saw-cutting process parameters on brittle cracks in monocrystalline silicon

In this paper, based on the principle of wire saw cutting, the simulation model of scribing of monocrystalline silicon (100) planes has been established. The stress field distribution is obtained by applying loads, and the depth of crack damage is calculated. This enables the influence of different process parameters on the crack damage of silicon wafers to be analyzed. Furthermore, the effect of process parameters on crack damage is verified by observing the surface morphology of silicon wafers through cutting experiments.​The results indicate that as the particle half angle increases, the stress region under single-crystal silicon decreases and the stress value increases. The material crack length decreases with increasing wire speed and particle density and increases with increasing feed speed. The trend is approximately linear. The findings of this study are of value in optimizing the cutting process of brittle materials, such as monocrystalline silicon, and in reducing material damage.