The shunt conductive effect of Ag doped RRAM via a qualitative circuit model

Resistive random access memory has attracted a great deal of attention due to its simple structure and high storage density. With the development of doping technology for RRAMs, it faces some problems in the resistive switching parament, such as high switching voltage, poor stability and uniformity. In this work, two different nanoparticle doping modes of RRAM were prepared, thin layer doping with appropriate density achieved better RS stability and uniformity for low power consumption devices. A circuit model is presented to analyze the conductive path in the resistive layer to fully account for why the thin layer doping with better performance. The uniform nanoparticle thin layer doping helps to connect more bypass channels as nodes, which increases the conductivity. Additionally, we investigated the effect of Ag nanoparticle density on the resistive characteristics, which experimentally verified the proposed circuit model. The combination of the proposed circuit model with the doping technology will significantly facilitate the development of RRAM.