Electron transport in 2DEG AlGaN/GaN, AlGaN/AlN/GaN and 3D GaN channels under a strong electric field

Electron transport characteristics were measured at room temperature applying nanosecond duration electrical pulses on two-dimensional electron gas (2DEG) channel in AlGaN/GaN heterostructures grown on SiC substrate. Crystal lattice self-heating effects were minimised by usage of nanosecond duration pulses being as short as 2 ns. We were able to reach highest current densities of 1.24 A/mm and 1.80 A/mm for different type of AlGaN/AlN/GaN and AlGaN/GaN heterostructures under the electric field of 57 kV/cm and 69 kV/cm, respectively. Even stronger electric field usage was allowed by the pulse source employed (up to 75 kV/cm for channel length of 12.5 \(\upmu\) $\mathrm{\mu }$ m), however, that was not needed as the electric current near saturation was observed. The three-dimensional (3D) electron channels in GaN epilayer on GaN substrate were also investigated under pulsed electric field reaching up to 216 kV/cm. The electron drift velocity was found from experimental charge current density characteristics assuming that Hall electron density does not change in the sample under high electric fields. Maximum drift velocities for the 2DEG channels in AlGaN/GaN and AlGaN/AlN/GaN samples were found to be up to 1.2 × 10 \(^{7}\) $_{}^7$ cm/s at 69 kV/cm and 1.1 × 10 \(^{7}\) $_{}^7$ cm/s at 57 kV/cm, respectively, while, the highest value of \(\sim\) $\sim$ 2.6 × 10 \(^{7}\) $_{}^7$ cm/s at 216 kV/cm was obtained for the 3D GaN channels. In the region of high electric fields the electron drift velocity in 2DEG channel was smaller than that in 3D channel as the result of stronger hot-phonon effect.