The light control resistance switch characteristics and conduction mechanism of BaTiO₃/MoS₂ structure

In this study, Cu/BaTiO₃/MoS₂/Cu nanodevices were fabricated through magnetron sputtering at room temperature, and the adjustable resistor switching (RS) functionality of the devices under dark and illuminated conditions was systematically investigated. By designing experiments and analyzing data, we propose a conceptual model to explain the conduction mechanism of the device. Under dark conditions, the switching between high-resistance and low-resistance states can be attributed to the modulation of the interface barrier between BaTiO₃ and MoS₂, as well as the formation and rupture of conductive filaments between the MoS₂ layers. However, under illumination, the BaTiO₃ layer generates photoexcited electrons that are injected into the MoS₂ layer and subsequently captured by defect states, thereby modulating the RS phenomenon. The device exhibits a high-to-low resistance ratio exceeding 10⁴, endurance up to 10³ cycles, data retention exceeding 10⁴ s, and a dispersion voltage below 0.05 V at room temperature. The light-controlled functionality of the device provides possibilities for extending the application of resistive switching-based non-volatile random access memory to the field of optics, such as imaging sensors, optoelectronic detectors, and optoelectronic switches.