Transient reflectance of silicon carbide during laser-induced phase separation

Laser irradiation can induce local modulations of functional material properties, such as a decreased resistivity or a variation in reflectance. Recent studies investigated the laser-induced phase separation of 4 H-SiC into carbon and silicon on top of regrown SiC to customize its electrical conductivity for the application in electronic devices. To understand the physical processes leading to the laser-induced phase separation, time-resolved pump-probe measurements represent a suitable tool. This study advances the state of the art by characterizing the transient reflectance changes in 4 H-SiC upon irradiation by spatially resolved pump-probe reflectometry. Since the laser heating alters the reflectance of the sample, the spatially resolved measurement enables to observe the heat conduction from the irradiated to the non-irradiated areas, which sustains for several milliseconds. Numerical simulations of the temperature evolution reveal a restricted one-dimensional heat conduction into depth due to the broad lateral extent of the irradiated area. The associated sustained increased temperature within the irradiated area most certainly abets the feasibility of the phase separation. These findings offer practical insights for optimizing the applied laser parameters to tailor the material properties via phase separation.