Performance evaluation of GPVs in existing TFET and proposed DG-JL-TFET: enhancing the RF performance through qualitative and quantitative approaches

This work thoroughly investigates the variations in geometrical parameters of both existing Tunnel Field-Effect Transistors (TFETs) and proposed Double-Gate Junctionless Tunnel Field-Effect Transistors (DG-JL-TFETs) to enhance the Radio Frequency (RF) performance of these advanced transistor devices. To improve the RF capabilities of these advanced transistors by employing both qualitative and quantitative research approaches. To overcome the issue of TFET’s limited current driving capabilities, which arises from a constrained number of charge carriers tunnelling across the junction, and its ambipolar behaviour (conducting both positive and negative charges), the DG-JL-TFET structure can be proposed as a viable solution. Modifying the attributes of GPVs, such as the gate length ( \(L_g\) $L_g$ ), channel thickness ( \(t_{ch}\) $t_{\mathit{ch}}$ ), and gate oxide thickness ( \(t_{ox}\) $t_{\mathit{ox}}$ ), is crucial in the effort to improve RF performance. The qualitative inquiry is an initial stage when a deep understanding of the fundamental principles behind TFET and DG-JL-TFET devices is established. The use of DG-JL-TFETs has led to the achievement of impressive peak frequencies of 217 GHz and 712 GHz. These frequencies demonstrate significant improvements in high-frequency performance, specifically because the realized short circuit gain has reached unity. This achievement is highly dependent on characteristics like transit time. DG-JL-TFETs have a decreased transit time compared to TFETs, which means that charge carriers move more efficiently from the source to the drain area. This results in greater device response and higher operational speed. The incorporation of double-gate (DG) and junctionless (JL) designs improves gate control, resulting in reduced leakage current and enhanced on-state current. DG-JL-TFETs, in contrast to TFETs, possess a broader tunnelling zone and do not have a PN junction. The specific arrangement of this structure allows for a greater frequency of electron tunnelling across the junction, as seen by the notably increased current in the on-state, measuring \({5.7\times 10^{-3}}\) $5.7\times {10}^{-3}$ A, which exceeds TFET’s current of \({16.13\times 10^{-6}}\) $16.13\times {10}^{-6}$ A.