Novel approach of laser formation and characterization of multi-faceted bi-lateral/front continuous PSi layer

In this novel research, three laser beams of equal intensities were employed to form multiple orthogonal Porous Silicon (PSi) layers on the bilateral and the front silicon substrate. The morphology of the synthesized PSi layers, composed of multi-axis of Si nanocrystallites columns, pores and mud-like structures, and perpendicular to each other. These specific Psi morphologies are created via two various laser-supporting etching pathways with an appropriate optical system consisting of different types of lenses, three laser diodes of similar power 100 mW with a short wavelength of 410 nm were employed as a photonic source during the etching process. The morphological, structural, and optical properties of the bi-lateral and top PSi layers were investigated extensively. The obtained results display the existence of ultra-high density of Si columns, pores and trenches in the front and the opposite lateral PSi layer. The grain sizes, surface morphology, PL emission and chemical bonds of the bi-lateral porous layers show a high degree of symmetry. This unique PSi layer can be suggested as an excellent choice for improving the surface area and decreasing the surface leakage current in porous silicon-based gas sensor devices.