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<p>The phase-shifted full-bridge (PSFB) converter is a preferred topology for isolated DC-DC converters with medium to high power levels. It can be utilized in a variety of applications, preferably with a wide input and/or output range. The efficiency of the converter, as well as its power density, is important factors for modern applications in the automotive industry or renewable energy sources. New semiconductor components based on gallium-nitride (GaN), silicon-carbide, or older silicon MOSFETs, specially designed for resonant converters, together with suitable converter modifications, enable an increase in efficiency and switching frequency. Various auxiliary networks and snubbers extended the limited zero-voltage switching (ZVS) in the lagging leg of the converter. GaN FET enables the utilization of small output capacitances in the PSFB converter to achieve ZVS at low loads even without auxiliary circuits. The small <i>R</i><sub>DS(on)</sub> enables the decrease of the conduction losses caused by the circulating current. The FB converter with a controlled rectifier and secondary side energy recovery snubber and the PSFB converter with a synchronous rectifier are compared by simulation for different operational conditions. Finally, a measurement is performed on a PSFB converter with a synchronous rectifier at reduced output power, using a different output rectifier as mentioned in the theoretical part. The experimental part highlights the partial or full achievement of ZVS at different load currents.</p>

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From IGBT to GaN implementation in phase-shifted full-bridge converter

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年6月12日

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  • Marek Pástor,
  • Daniel Gordan,
  • Chiemeka L. Maxwell

摘要

The phase-shifted full-bridge (PSFB) converter is a preferred topology for isolated DC-DC converters with medium to high power levels. It can be utilized in a variety of applications, preferably with a wide input and/or output range. The efficiency of the converter, as well as its power density, is important factors for modern applications in the automotive industry or renewable energy sources. New semiconductor components based on gallium-nitride (GaN), silicon-carbide, or older silicon MOSFETs, specially designed for resonant converters, together with suitable converter modifications, enable an increase in efficiency and switching frequency. Various auxiliary networks and snubbers extended the limited zero-voltage switching (ZVS) in the lagging leg of the converter. GaN FET enables the utilization of small output capacitances in the PSFB converter to achieve ZVS at low loads even without auxiliary circuits. The small RDS(on) enables the decrease of the conduction losses caused by the circulating current. The FB converter with a controlled rectifier and secondary side energy recovery snubber and the PSFB converter with a synchronous rectifier are compared by simulation for different operational conditions. Finally, a measurement is performed on a PSFB converter with a synchronous rectifier at reduced output power, using a different output rectifier as mentioned in the theoretical part. The experimental part highlights the partial or full achievement of ZVS at different load currents.