In this study, Au/n-Si (MS) without and with (Brushite + Monetite: PVC) (MPS) organic interlayer was created on the same n-Si wafer to determine its effect on electrical parameters. The energy-dependent profile of surface states \(({N}_{\text{ss}})\) for two Schottky diodes (SDs) was obtained from the forward bias I–V data. Donor-atoms \(({N}_{\text{D}})\) , depletion-layer width \(\left({W}_{\text{D}}\right),\) and \(\text{BH}({\Phi }_{B}\left(\text{CV}\right))\) was calculated for 1 MHz in the dark. All these parameters of two type SDs (MS, MPS) were compared to see the effect of organic interlayer and found to be a strong function of illumination and organic interlayer. Experimental results show that the used organic interlayer at M/S interface enhanced the performance of MS SD. As a result, we can say that (Brushite + Monetite: PVC) interlayer can be successfully used to replace conventional insulators prepared by traditional techniques in terms of low-cost, high mechanical strength, flexibility, easy production, environmentally friendly, and more sensitive to illumination.
