Effect of Gaussian defect density variations on electrical characteristics of TIPS-pentacene-based OTFT
摘要
This paper presents the influence of changes in the density of deep (Gaussian) defects, their energetic position, and width on key electrical parameters, including threshold voltage, current on–off ratio, and maximum transconductance in TIPS-pentacene-based organic thin-film transistors (OTFTs). Due to intrinsic disorder, organic semiconductors function with a Gaussian density of states governing the movement and injection of charge carriers within these materials. Our study reveals the presence of deep acceptor and donor density of states within the band gap of the TIPS-pentacene can significantly affect the performance of OTFTs. When the Gaussian acceptor (