2D axisymmetric modeling of femtosecond laser ablation in silicon: coupling transient carrier dynamics with phase explosion-induced morphology evolution
摘要
In this work, a two-dimensional (2D) axisymmetric Two-Temperature Model (TTM) was developed using COMSOL Multiphysics® to simulate the microhole geometry evolution of monocrystalline silicon due to single-pulse femtosecond laser ablation. This model combines a transient carrier density equation and a dynamic Drude model with a deformable mesh module to overcome the limitation of existing one-dimensional or constant-property models that do not include lateral energy transport. This combination enables the observation of alterations in surface reflectivity and free-carrier absorption throughout the laser ablation process. The simulation results were compared to independent numerical and experimental standards in the literature for validation. Within the high-fluence range of 13.30 to 72.56 J/cm², the mean absolute percentage error (MAPE) for depth and “squared” diameter were 7.40% and 20.30%, respectively. Under low fluence circumstances, the MAPE for depth was 24.13%, markedly outperforming previous 1D frameworks by directly incorporating lateral (r-axis) thermal dissipation. Finally, this framework offers a computationally efficient and physically sound approach to predicting and optimizing single-pulse laser micro-machining processes.