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<p>Monocrystalline silicon carbide (4&#xa0;H-SiC) is extensively employed in micro-devices owing its excellent properties such as wide band gap, high thermal conductivity, high hardness, high breakdown field strength and chemical inertness, but its efficient high-quality micromachining remains a challenge. This study experimentally investigates the machined surface morphology and quality, material removal mechanisms, and the effects of key process parameters (laser pulse energy, pulse overlap, water pressure, laser-waterjet offset distance) on microgroove top width, depth, and material removal rate (<i>MRR</i>) during hybrid laser-waterjet micromachining of 4&#xa0;H-SiC. It is shown that the microgrooves formed exhibit clean edges and surfaces without discernible recast layers or splash residues, while the oxidation and material microstructural alteration is much lower than those in dry laser machining. Additionally, it reveals that the width of the heat-affected zone (<i>HAZ</i>) on each side of the machined kerfs decreases as the water pressure increases since a higher water pressure allows material to be removed at a lower temperature, but excessive water pressure (&gt; 25&#xa0;MPa) and small laser-waterjet offset distance (&lt; 0.10&#xa0;mm) cause edge chipping on the edges of the machined microgrooves. Optimal microgroove depth and <i>MRR</i> are achieved at 15&#xa0;MPa water pressure and 0.10&#xa0;mm offset distance. This work provides theoretical and practical support for efficient, nearly damage-free 4&#xa0;H-SiC micromachining.</p>

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An experimental study of the hybrid laser-waterjet micromachining performance for 4 H-SiC

  • 期刊论文

  • 发表日期：

    2026年7月1日

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  • Tianpeng Dun,
  • Yanyan Jing,
  • Dalin Guo,
  • Zhenyu Liu,
  • Jun Wang,
  • Lijuan Zheng

摘要

Monocrystalline silicon carbide (4 H-SiC) is extensively employed in micro-devices owing its excellent properties such as wide band gap, high thermal conductivity, high hardness, high breakdown field strength and chemical inertness, but its efficient high-quality micromachining remains a challenge. This study experimentally investigates the machined surface morphology and quality, material removal mechanisms, and the effects of key process parameters (laser pulse energy, pulse overlap, water pressure, laser-waterjet offset distance) on microgroove top width, depth, and material removal rate (MRR) during hybrid laser-waterjet micromachining of 4 H-SiC. It is shown that the microgrooves formed exhibit clean edges and surfaces without discernible recast layers or splash residues, while the oxidation and material microstructural alteration is much lower than those in dry laser machining. Additionally, it reveals that the width of the heat-affected zone (HAZ) on each side of the machined kerfs decreases as the water pressure increases since a higher water pressure allows material to be removed at a lower temperature, but excessive water pressure (> 25 MPa) and small laser-waterjet offset distance (< 0.10 mm) cause edge chipping on the edges of the machined microgrooves. Optimal microgroove depth and MRR are achieved at 15 MPa water pressure and 0.10 mm offset distance. This work provides theoretical and practical support for efficient, nearly damage-free 4 H-SiC micromachining.