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<p>Chemical mechanical polishing (CMP) is a key technology for achieving shallow trench isolation (STI) processes, typically using ceria abrasive to achieve high performance and low defect levels. How to improve surface quality while achieving high selectivity in removing silicon and silicon nitride has become a research focus. This work mainly summarizes the polishing mechanism of ceria, methods to improve the removal rate of silicon dioxide and reduce the removal rate of silicon nitride, and research on improving the surface quality after CMP. The main methods to improve selectivity include increasing Ce<sup>3+</sup> concentration, grinding modification, and adding passivators. This provides valuable reference for improving the performance of STI CMP process in the future.</p>

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Research progress of ceria abrasives in STI CMP: optimization and application

  • 期刊论文

  • 发表日期：

    2025年9月23日

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  • Xinyu Zhao,
  • Xinyu Han,
  • Baimei Tan,
  • Jiadong Zhao,
  • Wenyue Qi,
  • Jiaji Geng,
  • Yunhui Shi,
  • Yanyan Huang

摘要

Chemical mechanical polishing (CMP) is a key technology for achieving shallow trench isolation (STI) processes, typically using ceria abrasive to achieve high performance and low defect levels. How to improve surface quality while achieving high selectivity in removing silicon and silicon nitride has become a research focus. This work mainly summarizes the polishing mechanism of ceria, methods to improve the removal rate of silicon dioxide and reduce the removal rate of silicon nitride, and research on improving the surface quality after CMP. The main methods to improve selectivity include increasing Ce3+ concentration, grinding modification, and adding passivators. This provides valuable reference for improving the performance of STI CMP process in the future.