Investigation on ultrasonic vibration assisted drilling of monocrystalline silicon: exit-chipping formation mechanism and axial force analysis
摘要
Monocrystalline silicon is widely used in the semiconductor, optoelectronics, and medical industries due to its excellent optical, electrical, and physical properties. However, its low fracture toughness, high hardness, and brittleness make it prone to severe edge chipping at the hole exit during conventional drilling (CD), thereby compromising its functional performance. To address this issue, this study establishes the cutting edge trajectory equation for ultrasonic vibration–assisted drilling (UVAD), analyzes the characteristics of variable cutting thickness, and elucidates the edge chipping formation mechanism based on fracture mechanics. Comparative experiments between CD and UVAD were conducted on monocrystalline silicon to investigate the effects of different process parameters on axial force, hole-exit micro-morphology, and edge chipping size. Experimental results show that UVAD reduces axial force by 41.8% compared to CD. The material removal mechanism is dominated by brittle fracture, typically manifesting as ring-shaped flaking at the hole exit, with prominent radial slopes and cracks. UVAD effectively suppresses ring flaking and increases the proportion of edge crushing removal. Compared with CD, the edge-chipping length (ls) and depth (lt) at the hole exit under UVAD are reduced by 16.6% and 27.86%, respectively. Within the experimental parameter range, the minimum ls and lt values—17.46 μm and 9.86 μm, respectively—are achieved at n = 13,000 r/min, vf = 3 mm/min, and A = 4μm.