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<p>The exceptional hardness and brittleness of 4H-SiC crystals present significant challenges in machining and application processes. While conventional grinding (CG) methods partially satisfy processing requirements, they exhibit limitations including low efficiency and substantial grinding forces and thermal effects, which frequently induce surface/subsurface damage in workpiece materials. Laser ablation–assisted grinding (LAAG) emerges as a promising solution to enhance processing efficiency and surface quality. In this study, we employed picosecond laser ablation on different crystalline surfaces of 4H-SiC and demonstrated that laser irradiation effectively modifies surface characteristics. Experimental results revealed that variations in laser scanning times and scanning speed significantly influenced ablation depth, subsequently affected grinding forces, surface quality, and material removal mechanisms in subsequent grinding experiments. Under optimal parameters of 75 scanning times and 500&#xa0;mm/s scanning speed, both surfaces achieved peak quality. The C-face demonstrated a surface roughness of 29.4 ± 3.8&#xa0;nm, which is reduced by 22.8% compared with CG, while the Si-face measured 31.1 ± 2.6&#xa0;nm, which is reduced by 30% compared with CG. This study establishes a novel method for grinding the surface of 4H-SiC crystals, expands research under different crystal faces, and achieves low-damage grinding of 4H-SiC, which promotes the application and development of this technology in ultra-precision machining.</p>

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Study of surface quality during picosecond laser ablation–assisted grinding of C-face and Si-face of 4H-SiC crystals

  • 期刊论文

  • 发表日期：

    2025年8月15日

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  • Yuying Yang,
  • Guangfei Li,
  • Tingting Zhou,
  • Mingdong Yi,
  • Shuoshuo Qu,
  • Chonghai Xu

摘要

The exceptional hardness and brittleness of 4H-SiC crystals present significant challenges in machining and application processes. While conventional grinding (CG) methods partially satisfy processing requirements, they exhibit limitations including low efficiency and substantial grinding forces and thermal effects, which frequently induce surface/subsurface damage in workpiece materials. Laser ablation–assisted grinding (LAAG) emerges as a promising solution to enhance processing efficiency and surface quality. In this study, we employed picosecond laser ablation on different crystalline surfaces of 4H-SiC and demonstrated that laser irradiation effectively modifies surface characteristics. Experimental results revealed that variations in laser scanning times and scanning speed significantly influenced ablation depth, subsequently affected grinding forces, surface quality, and material removal mechanisms in subsequent grinding experiments. Under optimal parameters of 75 scanning times and 500 mm/s scanning speed, both surfaces achieved peak quality. The C-face demonstrated a surface roughness of 29.4 ± 3.8 nm, which is reduced by 22.8% compared with CG, while the Si-face measured 31.1 ± 2.6 nm, which is reduced by 30% compared with CG. This study establishes a novel method for grinding the surface of 4H-SiC crystals, expands research under different crystal faces, and achieves low-damage grinding of 4H-SiC, which promotes the application and development of this technology in ultra-precision machining.