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<p>With the development of high-power devices and semiconductor lighting, there is an increasing demand for the optoelectronic wafers to have extremely low surface and subsurface damage. Consequently, efficient and ultra-precision planarization methods have become a critical challenge for application of high-performance devices. This paper proposes a novel magnetorheological dynamic pressure polishing based on gap-varying. The positive polishing force and material removal rate (<i>MRR</i>) models are established using hydrodynamic lubrication theory and contact mechanics theory. The developed models effectively predict the positive polishing force and <i>MRR</i> under different gap-varying frequencies and amplitudes. Single-factor repeated experiments are conducted to investigate the effects of gap-varying amplitude and frequency on the polishing performance of 2-inch sapphire wafer. The results indicate that as the gap-varying frequency increases, the peak, valley, and peak-valley values of the positive polishing force gradually decrease, leading to a reduction in <i>MRR</i> and a slight increase in surface roughness. Conversely, with an increasing gap-varying amplitude, the peak and peak-valley values of the positive polishing force gradually increase, while the valley value decreases, resulting in an improved <i>MRR</i> and reduced surface roughness. Under conditions of 2&#xa0;Hz gap-varying frequency and 1.5&#xa0;mm amplitude, an <i>MRR</i> of 17.56&#xa0;nm/min and a surface roughness of Ra 0.091&#xa0;nm are achieved. The proposed magnetorheological polishing method enables efficient and ultra-smooth planarization of optoelectronic wafers, while the established models provide theoretical guidance for optimizing process parameters.</p>

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Material removal model for magnetorheological dynamic pressure polishing based on gap-varying and experimental verification

  • 期刊论文

  • 发表日期：

    2025年5月22日

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  • Bin Luo,
  • Long Zhang,
  • Qiusheng Yan,
  • Zhenhua Jiao,
  • Youzhi Fu,
  • Jinxing Luo

摘要

With the development of high-power devices and semiconductor lighting, there is an increasing demand for the optoelectronic wafers to have extremely low surface and subsurface damage. Consequently, efficient and ultra-precision planarization methods have become a critical challenge for application of high-performance devices. This paper proposes a novel magnetorheological dynamic pressure polishing based on gap-varying. The positive polishing force and material removal rate (MRR) models are established using hydrodynamic lubrication theory and contact mechanics theory. The developed models effectively predict the positive polishing force and MRR under different gap-varying frequencies and amplitudes. Single-factor repeated experiments are conducted to investigate the effects of gap-varying amplitude and frequency on the polishing performance of 2-inch sapphire wafer. The results indicate that as the gap-varying frequency increases, the peak, valley, and peak-valley values of the positive polishing force gradually decrease, leading to a reduction in MRR and a slight increase in surface roughness. Conversely, with an increasing gap-varying amplitude, the peak and peak-valley values of the positive polishing force gradually increase, while the valley value decreases, resulting in an improved MRR and reduced surface roughness. Under conditions of 2 Hz gap-varying frequency and 1.5 mm amplitude, an MRR of 17.56 nm/min and a surface roughness of Ra 0.091 nm are achieved. The proposed magnetorheological polishing method enables efficient and ultra-smooth planarization of optoelectronic wafers, while the established models provide theoretical guidance for optimizing process parameters.