Scholarlink

<p>Wafer-level packaging is attracting increasing attention from semiconductor manufacturers. Dicing systems that cut thick wafers, such as full-thickness or bonded wafers, into individual chips are becoming ever more important. Laser dicing is associated with greater precision and fewer defects than other cutting methods. This study explores the laser ablation and stealth dicing of thick wafers using a 1064-nm nanosecond (ns) pulsed laser. To identify the proper conditions for each process, various process parameters such as pulse repetition rate and pulse width, average power, and scan speed were tested, and the processing characteristics and cutting mechanisms were analyzed. During laser ablation, surface defects such as spatter and grooves were reduced under the 1000&#xa0;kHz and 10&#xa0;ns pulse condition; single scribing passes with an average power of 70&#xa0;W fully cut the specimens. Stealth dicing under the 66&#xa0;kHz and 350&#xa0;ns pulse condition was not associated with surface defects such as spatter or chipping. Uniform micro-cracked layers formed inside wafers, in turn inducing splitting at a very low average power (1&#xa0;W). However, when stealth dicing proceeded under the 1000&#xa0;kHz and 10&#xa0;ns pulse condition, material was removed via melt ejection at the top of specimens; the cut surfaces were then similar to those afforded by laser ablation.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Laser ablation and stealth dicing of full-thickness silicon wafer

  • 期刊论文

  • 发表日期：

    2025年2月22日

查看全文
  • Yeongil Son,
  • Joonghan Shin

摘要

Wafer-level packaging is attracting increasing attention from semiconductor manufacturers. Dicing systems that cut thick wafers, such as full-thickness or bonded wafers, into individual chips are becoming ever more important. Laser dicing is associated with greater precision and fewer defects than other cutting methods. This study explores the laser ablation and stealth dicing of thick wafers using a 1064-nm nanosecond (ns) pulsed laser. To identify the proper conditions for each process, various process parameters such as pulse repetition rate and pulse width, average power, and scan speed were tested, and the processing characteristics and cutting mechanisms were analyzed. During laser ablation, surface defects such as spatter and grooves were reduced under the 1000 kHz and 10 ns pulse condition; single scribing passes with an average power of 70 W fully cut the specimens. Stealth dicing under the 66 kHz and 350 ns pulse condition was not associated with surface defects such as spatter or chipping. Uniform micro-cracked layers formed inside wafers, in turn inducing splitting at a very low average power (1 W). However, when stealth dicing proceeded under the 1000 kHz and 10 ns pulse condition, material was removed via melt ejection at the top of specimens; the cut surfaces were then similar to those afforded by laser ablation.