<p>Defect control is crucial in the Czochralski (CZ) process for producing high-quality silicon crystals used in microelectronic devices. This study introduces a novel “top cooling” method to minimize defects during crystal growth. The top cooling system, integrated with the CZ puller, enhances thermal uniformity and temperature gradients at the solid–liquid interface. Experimental analysis using laser particle counting on silicon wafers shows a significant reduction in defects, particularly in the upper regions of the ingot, with decreases of up to 92% for defects larger than 60 nm. Simulations using the 3D finite element method confirm the impact of top cooling on point defect concentration, showing a notable reduction in both vacancy- and interstitial-type defects. These findings demonstrate that top cooling is an effective technique for defect reduction, improving silicon crystal quality and offering promising benefits for large-scale semiconductor manufacturing compared to conventional methods like cooling tubes or thermal gradient control methods.</p>