<p>Diamond wire electrical discharge combined sawing (DWEDS) technology has a considerable prospect due to its improved cutting efficiency for the slicing of monocrystalline silicon, and the sawn surface properties are important indicators of processing quality. In this paper, the cutting experiments of monocrystalline silicon were carried out by diamond wire sawing (DWS) and DWEDS. The sawn surface properties of the two methods were compared in terms of surface morphology, surface roughness, and peak-to-valley (PV) value, and the effects of process parameters on the surface properties of the as-sawn slices in DWEDS were analyzed. The results show that the material on the surface of silicon slices is removed by diamond abrasives and electrical discharge in DWEDS. The electrical discharge increases the surface roughness and PV value of slices and reduces the surface quality. The electrical parameters and sawing parameters change the sawn surface properties by affecting the electric corrosion pits and the peak valley of the saw marks respectively. The surface roughness increases with increasing duty cycle, pulse voltage, and feed rate and decreasing pulse frequency and wire speed. The PV value increases overall with the increase of the above five process parameters. The results of the study provide an experimental reference for improving the surface properties of slices in DWEDS and promoting the application of this technology in the cutting of hard and brittle semiconductor materials.</p>