On prognosis of mismatch-induced stress during growth of films in the framework of magnetron sputtering

In this paper, we analyzed mass transfer during growth of epitaxial layers during magnetron sputtering. During the analysis, we investigate modifications of properties of films with variation of several parameters. We analyzed the possibility of decreased mismatch-induced stress on the considered films during their growth. Also, we present an analytical approach for the analysis of mass transfer, which makes it possible to take into account the nonlinearity of processes, as well as changes of parameters in space and time at one time.