<p>This work investigates the coupled thermo–electro–mechanical behavior of a piezo-semiconductor medium by integrating spatial nonlocality, temporal nonlocality, Kelvin–Voigt (KV) viscoelasticity, and memory-dependent derivatives into a unified analytical framework. The governing equations combine a Klein–Gordon (KG) type nonlocal operator with three-phase-lag heat conduction, semiconductor transport, and piezoelectric coupling, and are solved using the normal-mode approach. The analysis reveals that wave-field modifications remain highly concentrated within a thin boundary-interaction zone determined by the KG nonlocal parameters, where the competing effects of spatial nonlocality, temporal relaxation, KV viscosity, and memory-driven kernels jointly influence the penetration and strength of thermo–electro–mechanical responses. Spatial nonlocality suppresses the mechanical deformation and reduces the near-surface thermal amplitude, while simultaneously intensifying the coupled stress, carrier concentration, electric potential, and electric-displacement fields. Temporal relaxation mechanisms moderate these variations by redistributing amplitudes over depth and smoothing sharp spatial gradients. KV-viscosity significantly suppresses the electrical fields. By capturing the coupled roles of nonlocality, viscoelasticity, thermal relaxation, and memory-driven carrier–electromechanical interactions, the model provides a comprehensive basis for analyzing multiphysics wave behavior in piezoelectric semiconductor media relevant to SAW sensors, acousto-electronic components, transducers, and high-frequency signal-processing devices.</p>

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Heat map analysis of wave dynamics in nonlocal Kelvin–Voigt piezo-semiconductors under memory-dependent heat flux

  • Vipin Gupta,
  • Syed Modassir Hussain,
  • Murat Yaylacı,
  • Soumik Das

摘要

This work investigates the coupled thermo–electro–mechanical behavior of a piezo-semiconductor medium by integrating spatial nonlocality, temporal nonlocality, Kelvin–Voigt (KV) viscoelasticity, and memory-dependent derivatives into a unified analytical framework. The governing equations combine a Klein–Gordon (KG) type nonlocal operator with three-phase-lag heat conduction, semiconductor transport, and piezoelectric coupling, and are solved using the normal-mode approach. The analysis reveals that wave-field modifications remain highly concentrated within a thin boundary-interaction zone determined by the KG nonlocal parameters, where the competing effects of spatial nonlocality, temporal relaxation, KV viscosity, and memory-driven kernels jointly influence the penetration and strength of thermo–electro–mechanical responses. Spatial nonlocality suppresses the mechanical deformation and reduces the near-surface thermal amplitude, while simultaneously intensifying the coupled stress, carrier concentration, electric potential, and electric-displacement fields. Temporal relaxation mechanisms moderate these variations by redistributing amplitudes over depth and smoothing sharp spatial gradients. KV-viscosity significantly suppresses the electrical fields. By capturing the coupled roles of nonlocality, viscoelasticity, thermal relaxation, and memory-driven carrier–electromechanical interactions, the model provides a comprehensive basis for analyzing multiphysics wave behavior in piezoelectric semiconductor media relevant to SAW sensors, acousto-electronic components, transducers, and high-frequency signal-processing devices.