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<p>The IEEE 802.11ax wireless communication standard supports multiple frequency bands and high data throughput, which increases the susceptibility of receiver front-end circuits to interference and nonlinear distortion. Therefore, the low-noise amplifier (LNA) in the RF receiver must maintain a balanced trade-off among gain, noise figure, and linearity while operating over a wide bandwidth. In this work, an inductorless wideband LNA based on a single-to-double-ended Common-Gate–Common-Source (CG–CS) architecture is proposed to achieve compact implementation and improved RF performance. To enhance the linearity of the amplifier, a modified Complementary Derivative Superposition (CDS) technique is incorporated, which mitigates third-order nonlinear distortion by compensating the nonlinear transconductance components of the MOS devices. The inductorless topology also improves circuit integration and reduces chip area compared with conventional inductively matched LNAs. The proposed LNA is designed using UMC 65-nm CMOS technology, and post-layout simulations are performed using the Cadence Virtuoso environment. Simulation results demonstrate that the proposed design achieves a maximum gain of 17.19&#xa0;dB at 2.4&#xa0;GHz with an operating frequency range from 1.7 to 6.6&#xa0;GHz. The amplifier exhibits an IIP3 of 2.81&#xa0;dBm, indicating improved linearity due to the CDS-assisted architecture. The input return loss is maintained below − 10&#xa0;dB across the operating band, while the minimum noise figure is 3.24&#xa0;dB. The proposed LNA consumes 12.65&#xa0;mW from a 1.2&#xa0;V supply, making it suitable for compact and power-efficient RF receiver front-end applications such as Wi-Fi 6/IEEE 802.11ax systems.</p>

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A Broadband High Linear CMOS LNA with Modified Complementary Derivative Superposition for IEEE 802.11ax Application

  • 期刊论文

  • 发表日期：

    2026年6月2日

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  • Santhoshkumar Banoth,
  • Bhaskar Manickam,
  • Frank Li,
  • Vamsi Borra

摘要

The IEEE 802.11ax wireless communication standard supports multiple frequency bands and high data throughput, which increases the susceptibility of receiver front-end circuits to interference and nonlinear distortion. Therefore, the low-noise amplifier (LNA) in the RF receiver must maintain a balanced trade-off among gain, noise figure, and linearity while operating over a wide bandwidth. In this work, an inductorless wideband LNA based on a single-to-double-ended Common-Gate–Common-Source (CG–CS) architecture is proposed to achieve compact implementation and improved RF performance. To enhance the linearity of the amplifier, a modified Complementary Derivative Superposition (CDS) technique is incorporated, which mitigates third-order nonlinear distortion by compensating the nonlinear transconductance components of the MOS devices. The inductorless topology also improves circuit integration and reduces chip area compared with conventional inductively matched LNAs. The proposed LNA is designed using UMC 65-nm CMOS technology, and post-layout simulations are performed using the Cadence Virtuoso environment. Simulation results demonstrate that the proposed design achieves a maximum gain of 17.19 dB at 2.4 GHz with an operating frequency range from 1.7 to 6.6 GHz. The amplifier exhibits an IIP3 of 2.81 dBm, indicating improved linearity due to the CDS-assisted architecture. The input return loss is maintained below − 10 dB across the operating band, while the minimum noise figure is 3.24 dB. The proposed LNA consumes 12.65 mW from a 1.2 V supply, making it suitable for compact and power-efficient RF receiver front-end applications such as Wi-Fi 6/IEEE 802.11ax systems.