<p>A compact tunable band-pass filter designed for EEG, ECG, and EMG signal processing is introduced, featuring low power consumption and employing class-AB amplifiers along with high-value programmable active pseudo-resistors. These components are biased using the quasi-floating-gate technique with capacitive gate-voltage averaging, thereby reducing distortion. The filter, implemented in a three-stage design using 0.5 <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\mu \)</EquationSource> <EquationSource Format="MATHML"><math> <mi>μ</mi> </math></EquationSource> </InlineEquation>m CMOS technology and simulated with HSPICE, covers a tunable frequency range from 0.5 Hz to 3 kHz, operates on a bias current of 25 nA, and achieves a total harmonic distortion (THD) of 0.56% while offering a dynamic range of 66.95 dB. It occupies a silicon area of only 0.14 mm<sup>2</sup>. Despite being implemented in older technology, the filter maintains competitive area and power requirements and offers a tuning range superior to that reported in studies using newer technologies.</p>

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Low-Power, High-Dynamic Range Class-AB Tunable CMOS Filter for EEG, ECG, and EMG Signal Processing

  • Carlos Muñiz-Montero,
  • Liliana H. Salas-Barradas,
  • Alejandro Díaz-Sánchez,
  • Esteban Tlelo-Cuautle,
  • Carlos Sánchez-López,
  • Rafael Rojas-Rodríguez,
  • Luis A. Sánchez-Gaspariano

摘要

A compact tunable band-pass filter designed for EEG, ECG, and EMG signal processing is introduced, featuring low power consumption and employing class-AB amplifiers along with high-value programmable active pseudo-resistors. These components are biased using the quasi-floating-gate technique with capacitive gate-voltage averaging, thereby reducing distortion. The filter, implemented in a three-stage design using 0.5 \(\mu \) μ m CMOS technology and simulated with HSPICE, covers a tunable frequency range from 0.5 Hz to 3 kHz, operates on a bias current of 25 nA, and achieves a total harmonic distortion (THD) of 0.56% while offering a dynamic range of 66.95 dB. It occupies a silicon area of only 0.14 mm2. Despite being implemented in older technology, the filter maintains competitive area and power requirements and offers a tuning range superior to that reported in studies using newer technologies.