A Compact Differential CMOS LNA for 5G mm-Wave Receiver Front-Ends
摘要
This paper presents a compactly designed Ka-band low-noise amplifier (LNA) fabricated in a 65-nm CMOS process. A differential common-source topology is adopted as amplifier-stages, while transformer-based networks are employed to achieve gain matching and noise optimization. Bandwidth (BW) extension is further realized through merged inductive peaking, which effectively improved the circuit’s high-frequency response. The fabricated chip occupies a compact core area of 0.18 × 0.38 mm2 and is characterized using on-wafer probing with PCB-based biasing. Measurement results show that the proposed LNA achieves a peak gain of 16.6 dB with 3-dB BW from 22.8 to 34 GHz, a minimum noise figure (NF) of 3.6 dB, and power consumption (PDC) of 23 mW from a 1-V supply. The results are in good agreement with simulations and validate the effectiveness of the design methodology. Compared with state-of-the-art compact CMOS LNAs in similar frequency band, this design offers competitive overall performance based on an ultra-compact core chip size. It can be a strong candidate for 5G, satellite communication, and phased-array receiver front-ends.