Realization of a CMOS Current-Mode PVT Independent 1/X Function
摘要
This paper presents the realization of a CMOS current-mode 1/X function. The proposed circuit is derived from the Taylor series approximation of the inverse function and employs a MOSFET operating in the saturation region. The design exhibits robustness against Process, Voltage, and Temperature (PVT) variations. Functionality is verified using CADENCE Virtuoso simulations in 180nm TSMC CMOS technology. The circuit operates from a ±1.25V DC supply and supports a normalized input range of ±1. Simulation results show a maximum temperature-induced error of ±0.13dB over a