<p>A low phase noise wideband voltage-controlled oscillator (VCO) is proposed for millimeter-wave integrated systems, in which the scheme adopts a dual-core dual-mode VCO structure and a low-coupled 8-shaped transformer. A transformer-based switching network with a PMOS switch serving as the switching unit for oscillation mode selection is used to achieve low phase noise. An 8-shaped transformer is employed to reduce the magnetic coupling and a 7.3&#xa0;dB reduction is proven at 20&#xa0;GHz compared with the conventional transformer. Implemented in a 65&#xa0;nm CMOS process, the VCO provides a frequency range from 17.8 to 20.6&#xa0;GHz. A phase noise of -112.8 dBc/Hz is achieved at 1&#xa0;MHz offset from an 18.1&#xa0;GHz carrier with a figure of merit (FoM) of -184.4 dBc/Hz. The power consumption is 22.8 mW and the core area occupies 0.49 mm<sup>2</sup>.</p>

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A 17.8–20.6 GHz Low Phase Noise VCO with Low-Coupled 8-Shaped Transformer

  • Wei Zou,
  • Haiyang Liu,
  • Zhengwang Cheng,
  • Mei Wang,
  • Li Zhang,
  • Xinguo Ma,
  • Xuecheng Zou

摘要

A low phase noise wideband voltage-controlled oscillator (VCO) is proposed for millimeter-wave integrated systems, in which the scheme adopts a dual-core dual-mode VCO structure and a low-coupled 8-shaped transformer. A transformer-based switching network with a PMOS switch serving as the switching unit for oscillation mode selection is used to achieve low phase noise. An 8-shaped transformer is employed to reduce the magnetic coupling and a 7.3 dB reduction is proven at 20 GHz compared with the conventional transformer. Implemented in a 65 nm CMOS process, the VCO provides a frequency range from 17.8 to 20.6 GHz. A phase noise of -112.8 dBc/Hz is achieved at 1 MHz offset from an 18.1 GHz carrier with a figure of merit (FoM) of -184.4 dBc/Hz. The power consumption is 22.8 mW and the core area occupies 0.49 mm2.