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<p>A novel three stage ring VCO design which achieves high frequency values from 18.3 to 21.77&#xa0;GHz is designed in a standard 90&#xa0;nm CMOS technology in this paper. The VCO employs a novel architecture of the delay stage using active inductors for tuning the delay stage, ensuring less area. Additionally, an active resistor is integrated in sequence with the delay stage to fine-tune the VCO. The active resistor plays a role in modifying the equivalent resistance of the delay stage, enabling tuning while maintaining good phase noise performance. For the frequencies of concern, the recorded phase noises are from -71.98 dBc/Hz to -75.21 dBc/Hz at 1&#xa0;MHz offset frequency. The achieved figure of merit is -171.2dBc/Hz @18.3&#xa0;GHz. The findings demonstrate that the proposed VCO performs better than the existing VCOs.</p>

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Ring VCO using Active Resistors and Active Inductors for K band Applications

  • 期刊论文

  • 发表日期：

    2025年6月2日

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  • Isha Kadyan,
  • Manoj Kumar,
  • Amit Prakash Singh

摘要

A novel three stage ring VCO design which achieves high frequency values from 18.3 to 21.77 GHz is designed in a standard 90 nm CMOS technology in this paper. The VCO employs a novel architecture of the delay stage using active inductors for tuning the delay stage, ensuring less area. Additionally, an active resistor is integrated in sequence with the delay stage to fine-tune the VCO. The active resistor plays a role in modifying the equivalent resistance of the delay stage, enabling tuning while maintaining good phase noise performance. For the frequencies of concern, the recorded phase noises are from -71.98 dBc/Hz to -75.21 dBc/Hz at 1 MHz offset frequency. The achieved figure of merit is -171.2dBc/Hz @18.3 GHz. The findings demonstrate that the proposed VCO performs better than the existing VCOs.