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<p>This paper presents a high-performance K-band, low-voltage wideband Gilbert cell mixer using PMOS as the active load. The chip, developed with TSMC’s 0.18-μm SiGe Bi-CMOS technology, integrates MOS and HBT bipolar junction transistors. The transconductance stage utilises HBT transistors to enhance conversion gain, while the switching stage employs a CMOS inverter to lower supply voltage and reduce DC power consumption. The double-balanced mixer employs modified Marchand baluns on the RF and LO ports to convert single-ended signals into differential signals. The measurements of the proposed mixer demonstrate a power conversion gain ranging from 1.4 to 4.1&#xa0;dB, with a consistent variation of ± 1.35&#xa0;dB between 24 and 30&#xa0;GHz. The input third-order intercept point (IIP3) ranges from − 3.5 to − 2.8&#xa0;dBm. The RF-to-IF, RF-to-LO, and LO-to-IF isolations are 32&#xa0;dB, 49&#xa0;dB, and 26&#xa0;dB, respectively. The total DC power consumption for 1&#xa0;V voltage with output buffer is 9.35&#xa0;mW. The total chip size is 0.9 × 0.72&#xa0;mm<sup>2</sup>.</p>

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A 24–30 GHz Wideband, Low Voltage, Low-Power Down-Conversion Mixer in 0.18-μm SiGe Bi-CMOS Technology

  • 期刊论文

  • 发表日期：

    2025年3月21日

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  • Jun-Da Chen,
  • Jia-Yu Wu

摘要

This paper presents a high-performance K-band, low-voltage wideband Gilbert cell mixer using PMOS as the active load. The chip, developed with TSMC’s 0.18-μm SiGe Bi-CMOS technology, integrates MOS and HBT bipolar junction transistors. The transconductance stage utilises HBT transistors to enhance conversion gain, while the switching stage employs a CMOS inverter to lower supply voltage and reduce DC power consumption. The double-balanced mixer employs modified Marchand baluns on the RF and LO ports to convert single-ended signals into differential signals. The measurements of the proposed mixer demonstrate a power conversion gain ranging from 1.4 to 4.1 dB, with a consistent variation of ± 1.35 dB between 24 and 30 GHz. The input third-order intercept point (IIP3) ranges from − 3.5 to − 2.8 dBm. The RF-to-IF, RF-to-LO, and LO-to-IF isolations are 32 dB, 49 dB, and 26 dB, respectively. The total DC power consumption for 1 V voltage with output buffer is 9.35 mW. The total chip size is 0.9 × 0.72 mm2.