PGME-3/NGME-3 only consists of three MOSFETs and can be operated at 5 GHz. The minimum step time of the material implication circuit based on PGME-3 and NGME-3 is 70 ps. However, the negative/positive lobe of PGME-3/NMGE-3’s \(i_i-v_i\) curve expands as the frequency of input \(v_i\) increases. The tails of the PGME-3’s negative lobe and NMGE-3’s positive lobe get longer as the amplitude of \(v_i\) gets bigger. This paper proposes a GHz-level memristor emulator consisting of one MOSFET and two diodes, i.e., PGME-1M2D and NGME-1M2D. The operating frequency of the proposed memristor emulator is high up to 10 GHz. The minimum step time of the material implication circuit based on PGME-1M2D and NGME-1M2D is 85 ps. The long tails of PGME-1M2D/NGME-1M2D’s \(i_i-v_i\) curves do not appear when the amplitude of \(v_i\) is 3 V. Additionally, the PGME-1M2D is verified with the discrete p-channel MOSFET of CD4007.
