<p>The problem of an elastic SH-wave diffraction from a thin finite defect formed on a flat interface between a rigidly joined homogeneous elastic layer and an interface is analyzed. The interface damage is modelled by an impedance strip. The joint is considered a series-connected semi-infinite and finite planar elastic waveguides excited by the normal SH-mode. The problem is reduced to an infinite system of linear algebraic equations of the second kind using the Wiener–Hopf technique. Based on its solution, the dependencies of the displacement field distribution on the stress-free surface of the elastic layer regarding the geometrical and physical parameters are investigated. The spectral properties of an open resonator formed by the rectangular waveguide’s defect area are studied. This study focuses on the physical features of the displacement field and its frequency dependencies as markers for detecting defects and their parameters.</p>

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SH-wave diffraction from the thin impedance-type defect in the rigid joint of interface and elastic layer

  • Dozyslav B. Kuryliak,
  • Zinoviy T. Nazarchuk,
  • Myron V. Voytko,
  • Yaroslav P. Kulynych

摘要

The problem of an elastic SH-wave diffraction from a thin finite defect formed on a flat interface between a rigidly joined homogeneous elastic layer and an interface is analyzed. The interface damage is modelled by an impedance strip. The joint is considered a series-connected semi-infinite and finite planar elastic waveguides excited by the normal SH-mode. The problem is reduced to an infinite system of linear algebraic equations of the second kind using the Wiener–Hopf technique. Based on its solution, the dependencies of the displacement field distribution on the stress-free surface of the elastic layer regarding the geometrical and physical parameters are investigated. The spectral properties of an open resonator formed by the rectangular waveguide’s defect area are studied. This study focuses on the physical features of the displacement field and its frequency dependencies as markers for detecting defects and their parameters.